Abstract

Planar mid-wavelength infrared photodetectors with InAsSb absorber grown on GaAs substrates are demonstrated. Epilayer growth and diffusion of zinc in InAsSb were carried out in a multi-wafer MOCVD reactor. In addition to the planar p+n junction defined by Zn diffusion, a Schottky junction was integrated to reduce the dark current and improve the optical responsivity. At 85 K, a cutoff wavelength greater than 5 μm was achieved and specific detectivity D* was estimated to be 5.0 × 1011 cm·Hz1/2 W−1 at 4.1 μm under zero bias condition. Furthermore, the photodetector can operate up to 160 K with a D* of 1.0 × 109 cm·Hz1/2 W−1.

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