Abstract
The authors investigated a possibility to develop a technique for high-speed and high-sensitivity imaging in the infrared range of light. The corresponding study was done by applying a planar microdischarge device that was a semiconductor-gas-discharge image converter. The requirements for developing the semiconductor component of the device were formulated to enhance the high-speed performance of the device. To meet these demands, extrinsic selenium-doped silicon detectors were developed. The doping of the semiconductor with selenium was done by high-temperature diffusion of the element from the vapor phase. To find the optimal conditions for the preparation of detectors, the efficiency of doping silicon with selenium as a function of the selenium vapor pressure was studied. The operation of the microdischarge device where the developed detectors were applied was investigated. This study demonstrates that converters equipped with Se:Se detectors can provide imaging of objects heated to temperature Tmin∼200°C with a temporal resolution on the order of 10−6s and a spatial resolution of ∼5lines∕mm.
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