Abstract
The recent development of optoelectronic devices based on quantum wells should permit monolithic integration of active and passive optical components within the same epitaxial layers. A planar process using multiple quantum well (MQW) layers to realise this objective is described. Nonlinear optical processes will be present in such structures, and their significance is discussed. Carrier lifetime measurements performed on GaAs/AlGaAs multiple quantum well structures are reported.
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