Abstract

We compare the performance of high speed planar InP/InGaAs separate absorption, grading and multiplication region avalanche photodiodes where the grading layer consists of a single quaternary layer or a chirped superlattice. The devices are grown by atmospheric pressure metal organic vapour phase epitaxy which has been found to produce good quality, low defect density, uniform material on large area (2") slices. Both types of grading layer are found to suppress the slow component of the avalanche photodiodes pulse response while exhibiting low dark currents (1-10nA @ 0.9Vb). The characteristics of the diodes are shown to be uniform over 2" wafers and suitable for use at bit rates up to at least 2.4Gbaud.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.