Abstract
We have studied the fabrication and modelling of integrated planar inductors on silicon made by using a standard 0.8 μm BiCMOS process. In order to aid the design of circuits including integrated inductors we have developed and tested a semiempirical equivalent circuit model for the planar inductors. The model, which has been implemented in the circuit simulator APLAC, shows good agreement with the measured inductor values, quality factors and S-parameters. Although the measured Q-values are below 10 in the GHz frequency range, the integrated inductors can be utilized in many RF IC applications. As a first demonstration for this we have successfully applied an integrated inductor to a low voltage monolithic voltage-controlled oscillator circuit at 1.8 GHz.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
