Abstract
This letter demonstrates different planar highly efficient on-chip antennas at 165 GHz with high gain utilizing a standard silicon-Germanium bipolar-complementary metal-oxide-semiconductor (Bi-CMOS) process with a localized backside etching (LBE) feature that allows cutting air trenches in the silicon. A dipole antenna, a folded dipole antenna with air trenches around the radiator, and a single-ended patch antenna with air trenches at the radiating edges are designed, fabricated, and characterized in the D-band (110–170 GHz). The geometry of each individual antenna and the LBE air trenches are optimized to meet both process reliability specifications and radiation performance simultaneously. Metal fillings effects on the radiation pattern and matching are also studied.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
