Abstract

Cu2O microcrystals are electrodeposited on an epitaxial GaN layer on a Si(111) substrate to improve the solar water splitting efficiency of a GaN photoanode. The performance of the GaN/Cu2O composite junction photoanode is investigated as a function of the Cu2O deposition amount for Cu2O microcrystal formation. For optimum Cu2O deposition amount, the photocurrent density is significantly enhanced compared to that of the bare GaN photoanode. The improved water splitting performance is attributed to the built-in electric field and band offsets of the n-GaN/p-Cu2O heterostructure, promoting the separation of photogenerated electrons and holes and the transport of the hole to the surface.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.