Abstract
Recently the first prototype of microstrip edgeless silicon detector for the TOTEM experiment has been successfully produced and tested. This detector is fabricated with standard planar technology, reach sensitivity 50 μm from the cut edge and can operate with high bias at room temperature. These almost edgeless detectors employ a newly conceived terminating structure, which, although being reduced with respect to the conventional ones, still controls the electric field at the device periphery and prevents leakage current breakdown for high bias. Detectors with the new terminating structure are being produced now and will be installed at LHC in the Roman Pots, a special beam insertion, to allow the TOTEM experiment to detect leading protons at 10 σ from the beam. This paper will describe this new terminating structure for planar silicon detectors, how it applies to big size devices and the experimental tests proving their functionality.
Highlights
T HE TOTEM experiment will detect the large hadron collider (LHC) leading protons at special beam pipe insertions called Roman Pots
Planar silicon detectors have a wide (0.5–1 mm) insensitive border region around the sensitive area. This insensitive region is occupied by a sequence of guard rings which controls the potential distribution between the detector’s sensitive area and the die cut to minimize the electrical field and, the surface leakage current [2], [3]
All of them had CTS with the current terminating ring (CTR) surrounding the whole sample and AC coupled strips biased through the bias ring (BR) which is placed between the CTR and the sensitive bulk
Summary
T HE TOTEM experiment will detect the large hadron collider (LHC) leading protons at special beam pipe insertions called Roman Pots. Planar silicon detectors have a wide (0.5–1 mm) insensitive border region around the sensitive area. This insensitive region is occupied by a sequence of guard rings which controls the potential distribution between the detector’s sensitive area and the die cut to minimize the electrical field and, the surface leakage current [2], [3]. A new approach to reducing this region will be described
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