Abstract
The defect structure of α-phase gallium oxide thin films was investigated using transmission electron microscopy (TEM). Epitaxial Ga2O3 films were grown via halide vapor-phase epitaxy on c-plane sapphire substrates. TEM analysis revealed a high density of extended planar defects within the films, primarily located along prismatic planes of {112¯0} type. Displacement vectors were determined using the invisibility criterion for stacking faults. The study encompassed both planar and cross-sectional views of the films. It is hypothesized that these defects form due to the motion of edge partial dislocations with the 13⟨11¯00⟩ Burgers vector. Various mechanisms of their formation have been explored.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.