Abstract
The defect structure of α-phase gallium oxide thin films was investigated using transmission electron microscopy (TEM). Epitaxial Ga2O3 films were grown via halide vapor-phase epitaxy on c-plane sapphire substrates. TEM analysis revealed a high density of extended planar defects within the films, primarily located along prismatic planes of {112¯0} type. Displacement vectors were determined using the invisibility criterion for stacking faults. The study encompassed both planar and cross-sectional views of the films. It is hypothesized that these defects form due to the motion of edge partial dislocations with the 13⟨11¯00⟩ Burgers vector. Various mechanisms of their formation have been explored.
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