Abstract
Interfacial reactions of Y and Er thin films on both (111)Si and (001)Si have been studied by transmission electron microscopy (TEM). Epitaxial rare-earth (RE) silicide films were grown on (111)Si. Planar defects, identified to be stacking faults on \(\left\{ {10\bar 10} \right\}\) planes with 1/6\(\left\langle {\bar 12\bar 13} \right\rangle \) displacement vectors, were formed as a result of the coalescence of epitaxial silicide islands. Double-domain epitaxy was found to form in RE silicides on (001)Si samples resulting from a large lattice mismatch along one direction and symmetry conditions at the silicide/(001)Si interfaces. The orientation relationships are [0001]RESi2−x//\(\left[ {1\bar 10} \right]\)Si, \((1\bar 100)\)RESi2−x//(001)Si and [0001]RESi2−x/\([\bar 1\bar 10]\)Si, \((1\bar 100)\)RESi2−x//(001)Si. The density of staking faults in (111) samples and the domain size in (001) samples were found to decrease and increase with annealing temperature, respectively.
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