Abstract

We experimentally and numerically studied planar defect modes excited at band-edge resonant mode frequencies in three-dimensional photonic crystals. We identified the observed peaks as the defect modes using the spectrum calculated at the defect layer. The spectrum also clarifies the difference between these modes and ordinary band-edge resonant modes. The calculated spatial distribution of the electric field in the defect modes shows that the defect modes have a characteristic field concentration in the band-edge resonant mode.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call