Abstract
A convenient method for calculating the dechannelling cross-section of extended defects for channelled ions is demonstrated for the planar channelling of energetic He ions at dislocations. The method is applied to the dechannelling of planar-channelled ions at arrays of dislocations and it is shown that the dechannelling cross-section is no longer proportional to the square root of the ion energy when the mean separation of dislocations is comparable to the cross-section at an isolated dislocation.
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