Abstract
Computer simulation is used to investigate planar dechanneling and volume capture of protons with energies of up to 200 GeV in a bent silicon crystal. Energy and temperature dependences of dechanneling lengths, discovered experimentally, are analyzed. It is shown that the capture of protons into the channeling regime within the crystal bulk due to multiple scattering by crystal electrons and nuclei decreases with decreasing radius of bending as well as with increasing energy of the particles, whereas it is practically independent of the crystal temperature.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
