Abstract
Effects of axial and planar channeling in Si(100) crystals on junction depth and sheet resistance control are studied for the case of shallow junction implants. Whole-wafer sheet resistance mapping, SIMS and spreading resistance profiling are used to characterize the effects of tilt and azimuthal angle variations for electrostatic and mechanical-scan implanters. Additional effects studied include critical angle variations with atomic mass and ion energy, beam scan angles for electrostatic-scan systems, implants through thin dielectric layers, wafer flexing over heat-sink pads and errors in crystal orientation. Planar and axial channel critical angles are modeled for B, P and As implants into Si(100) for energies between 20 and 200 keV. System requirements for avoidance of direct channeling effects are reviewed for IC production conditions.
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