Abstract
Data are presented on the planar (top–down) oxidation of graded AlxGa1−xAs upper confining layers of quantum well heterostructures in order to realize high resolution square-edge lasers (or waveguides). A model is developed to facilitate composition grading of AlxGa1−xAs for vertical-wall (square corner or edge) planar oxidation at convenient oxidation times and tolerances. A simple AlGaAs–GaAs quantum well laser structure is used to demonstrate the square-wall (square-corner) planar oxidation method.
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