PL and DLTS Analysis of Carbon-Related Centers in Irradiated P-Type Cz-Si

Abstract

Photoluminescence (PL) and deep level transient spectroscopy (DLTS) have been used to investigate carbon related defects in p–type Cz–Si induced by proton irradiation. The interstitial carbon–interstitial oxygen (CiOi) level in DLTS and the corresponding C–line (789.5 meV) in PL spectra are detected in as–irradiated samples. Formations of the so–called P–line at 767 meV in PL and a new defect level at about 0.39 eV above the valence band edge, Ev, in the DLTS spectra are observed in the annealed samples. The evolution of the CiOiand Ev+0.39 eV levels in DLTS and also the C– and P– lines in PL upon post–irradiation heat–treatment is investigated, showing that the intensity of the CiOilevel decreases with heat–treatment, which is consistent with the PL data for the C–line. The intensity of the Ev+0.39 eV level is enhanced and then saturates with annealing duration. We tentatively assign this level to the interstitial carbon–oxygen dimer (CiO2i).