Abstract
In this work, the possibility of using reduced Graphene oxide for x-ray detection has been explored. A highly conductive reduced Graphene Oxide (rGO) synthesized using a hybrid method was used to fabricate a pixelated Si/SiO2 bottom gate field effect transistor. The fabricated device is a 3×3 pixelated large area detector and was tested for its response to x-rays at room temperature and low temperatures by irradiating it with x-rays from top. Significant change in resistance of rGO is observed during irradiation which shows its sensitivity to x-rays.
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