Abstract
Abstract In this work, the possibility of using reduced Graphene oxide for X-ray detection has been explored. A highly conductive reduced Graphene Oxide (rGO) synthesized using a hybrid method was used to fabricate a pixelated Si/SiO2 bottom gate field effect transistor. The fabricated device is a 3x3 pixelated large area detector and was tested for its response to X-rays at roomtemperature and low temperatures by irradiating it with X-rays from top. Significant change in resistance of rGO is observed during irradiation which shows its sensitivity to X-rays.
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