Abstract
The pixel design of CMOS image sensor with large dynamic range of 71dB and high charge transfer efficiency by simulation is presented. The electron transfer efficiency of 100% can be obtained, which means all the electrons induced by illumination can be transferred to the floating drain. The influence of gate length and photodiode location on charge transfer efficiency and dynamic range is investigated in this paper.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
