Pixel circuit design for an accumulation mode BDJ APS in a 0.18µm CMOS technology

Oussama Moudda Azzem,Caroline Lelandais-Perrault,Mohamed Ben Chouikha,Hakeim Talleb,Geoffroy Klisnick,Anthony Kolar

doi:10.1109/icecs49266.2020.9294950

Pixel circuit design for an accumulation mode BDJ APS in a 0.18µm CMOS technology

Oussama Moudda Azzem, Caroline Lelandais-Perrault + Show 4 more

https://doi.org/10.1109/icecs49266.2020.9294950

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Publication Date: Nov 23, 2020

Citations: 10

Affiliation: Laboratoire de Génie Électrique et Électronique de Paris, University of Paris-Saclay, Institut Polytechnique de Paris, French National Centre for Scientific Research

#Pixel Architecture #Active Pixel Sensor + Show 8 more

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Abstract

This paper proposes an Active Pixel Sensor (APS) structure for the BDJ photodetector in the X-FAB XH018 CMOS process. The pixel architecture will be used to design a matrix array of BDJ active pixels in order to develop a lab-on-chip Enzyme-linked immunosorbent assay (ELISA). A solution to solve the capacitance unbalance in the BDJ structure is proposed. It allows easy and accurate measurement of the BDJ photocurrents. Noise analysis has been carried out and our design reduces the follower noise to 60μVrms. The designed BDJ active pixel has a fill factor of 61% for an active area of 100μmx100μm.

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