Abstract
The appearance of silicate films at the metal surface has been detected. Measurements with the Scanning Kelvin Probe and Scanning Vibrating Electrode do show the existence of local anodes under artificially prepared silicate films on copper. The anode is surrounded by the cathode formed by the free copper surface and also by a cathodic area represented by the complete silicate covered copper surface. Galvanostatic investigations do show that the mechanism of copper dissolution is changed. The formation of Cu2+ -ions is hindered, only Cu+ ions can be formed under thick silicate films. The existence of the silicate film hinders the formation of a protective oxide film. The copper dissolution is higher than without a silicate film. This is the first time that the mechanism of pitting corrosion of copper in cold water due to the formation of silicate films has been proofed.
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