Abstract
Measurements of the soft upset cross section due to energetic charged pions were made in various 16 Mbit memory chips, as a function of incident pion energy and for chips with different cell technologies. Significant differences are seen to exist between cell technologies, up to a factor of 1000 in cross section. Upset cross sections are reported that exhibit proportionality to the reaction cross section for pions on silicon, including the well-known enhancement over proton and neutron cross sections near the delta resonance. Implications of this enhancement for pion-induced upsets due to cosmic ray fluxes are discussed.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
