Abstract
Highly efficient, lattice-matched heterojunction photodiodes were fabricated by liquid-phase-epitaxial growth of a pIn0.07Ga0.93Sb layer, followed by an nGa0.3Al0.7Sb layer on the p-type (111) GaSb substrate. The spectral photocurrent response of the diodes was nearly flat in the wavelength range of 1.0–1.8 µm. The external guantum efficiency of photodiodes was 32% at zero voltage bias in the vicinity of 1.5 µm where a minimum loss of optical fibre was reported.
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