Abstract
We have demonstrated the synthesis of Indium Nitride (InN) Nanopines (NПs) array on Si substrate using Oblique Angle Deposition (OAD) technique. The deposited InN NПs have an average height of ∼2 μm. The grown InN NПs are hexagonal in nature and have prominent diffraction peak along <002> orientation. The X-ray photoelectron spectroscopy (XPS) measurement confirms the presence of InN bonds. An Optical absorption spectroscopy reveals high band gap absorption at approximately 1.15 eV. The carrier concentration of (∼1.8 × 1020 cm−3) was determined using capacitance (C) – voltage (V) measurement. The infrared detection with maximum responsivity at 1.14 eV (∼1078 nm) was obtained near the optical band edge at 10 K. A low device sensitivity was observed with an increasing operating temperature.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callSimilar Papers
More From: Journal of Alloys and Compounds
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
