Abstract
We have demonstrated the synthesis of Indium Nitride (InN) Nanopines (NПs) array on Si substrate using Oblique Angle Deposition (OAD) technique. The deposited InN NПs have an average height of ∼2 μm. The grown InN NПs are hexagonal in nature and have prominent diffraction peak along <002> orientation. The X-ray photoelectron spectroscopy (XPS) measurement confirms the presence of InN bonds. An Optical absorption spectroscopy reveals high band gap absorption at approximately 1.15 eV. The carrier concentration of (∼1.8 × 1020 cm−3) was determined using capacitance (C) – voltage (V) measurement. The infrared detection with maximum responsivity at 1.14 eV (∼1078 nm) was obtained near the optical band edge at 10 K. A low device sensitivity was observed with an increasing operating temperature.
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