Abstract
In this article, a PIN-diode-based high-intensity radiation fields (HIRF) protection method was proposed and the sensitivity to the field intensity of incident wave has been verified by a printed dipole antenna loaded with three pairs of PIN diodes at S-band. To illustrate this method, an equivalent linear circuit was raised to analyze the basic operation principle of the proposed antenna. With a low-power incident wave, the PIN diodes are in off-state and the gain of the proposed antenna remains unaffected; while it drops considerably as the PIN diodes are triggered by HIRF. Furthermore, extensive parametric studies of the structure were analyzed by full-wave simulation to investigate the key factors affecting the performance of HIRF protection and antenna characteristics. Finally, a prototype was fabricated and experiments were implemented to verify the feasibility, which shows a high isolation of 19 dB. To the best of our knowledge, the proposed antenna is the first one to achieve HIRF protection through integrated antenna technology, which features with low cost and compact structure, providing a new perspective.
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