Abstract
Abstract A novel photo-induced metallo-organic decomposition (PIMOD) process has been developed for producing high-quality lithium niobate thin films on silicon for applications in non-volatile memories. Crack and interdiffusion-free films have been grown by the PIMOD process at a lower temperature for a shorter processing time than those required for the conventional MOD process. MFS capacitors were fabricated to examine the electrical and optical properties of the lithium niobate thin films. The C-V hysteresis curves show ferroelectric switching. Only a very small amount of mobile ionic contamination was observed in C-V measurements using temperature and field stresses. The polarization reversal in the films was observed as shown in the photocurrent experiments.
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