Abstract
This paper presents a combinatorial methodology for fabricating orthorhombic ZnSnN2 (ZTN) by using Zn–Sn3N4 composition spreads. This study is the first to verify the substantial piezotronic and piezophototronic features of ZTN on the basis of asymmetric current–voltage (I–V) characteristics. Regarding the piezophototronic effect, at a −5 V bias, the current density was enhanced up to 2.5 times when the applied pressure increased from 0.625 to 2.5 GPa. Schottky barrier height variations at S1 and S2 were calculated under a pressure of 2.5 GPa and were observed to have increased and decreased by approximately 1.0 and 22 mV, respectively. The results clarified the I–V behavior and also supported the proposed energy-band structure evolution of piezotronic and piezophototronic ZTN. In addition, ZTN formation was verified through X-ray photoelectron spectroscopy and X-ray diffraction. A deconvolution algorithm was employed to validate the ratio of orthorhombic ZTN (Pna21) (approximately 30%). In addition, UV–v...
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