Abstract
The anomalous Hall effect (AHE) in [Co/Pt]3 thin films with perpendicular magnetic anisotropy grown on Pb(Mg1/3Nb2/3)O3–Pb0.7Ti0.3O3 substrates is investigated under application of different electric fields at various temperatures. As the sweeping mode of application of the electric field changes from symmetric bipolar to asymmetric bipolar, the butterfly-like behavior of the resistivity vs electric field curves is converted into loop-like behavior, which is attributed to the piezostrain effect. The anomalous Hall conductivity σAH vs longitudinal conductivity σxx characteristics at the corresponding temperatures indicate two AHE mechanisms, which include the side jump and/or intrinsic mechanisms. In addition, the σAH–σxx curve shows obvious changes under different electric fields, which means that the AHE can be mediated. These results are highly important for further understanding of the mechanism by which the electric field can control the AHE.
Highlights
The electric voltage has been used rather than the magnetic field or the current for direct control of the magnetization direction or magnetic anisotropy in ferromagnetic/ferroelectric (FM/FE) multiferroic heterostructures via magnetoelectric (ME) coupling, enabling reduced power consumption and improved speed.1–3 Tuning of the interfacial magnetism in magnetic films with perpendicular magnetic anisotropy (PMA) using electric fields is extremely important for realization of electric field-controllable high-sensitivity spintronic devices and ultrahigh storage densities.4–9 The most efficient way to realize this goal is to control the anomalous Hall resistance transition electrically.10,11 In FM/FE multiferroic heterostructures, the electric field-mediated ME coupling mechanisms are mainly based on the piezostrain effect that results from elastic coupling between the constituent materials.2,12 These mechanisms are indirect in that the piezostrain effect mediates the converse piezoelectric effect of the FE component and the magnetostrictive effect of the FM component to obtain the required magnetic response under an applied electric field; in addition, the charge effect occurs that depends on the charge screening at the FM/FE interface,13,14 which can affect the magnetic moments, the anomalous Hall resistance, and/or the exchange interaction
Cai et al.16 achieved deterministic magnetization switching in a Co/Ni/Co//PMN-PT multiferroic heterostructure with perpendicular magnetic anisotropy (PMA) via electric field control of the anomalous Hall resistance
In the [Co/Pt]3/PMN-PT heterostructure, to enable further investigation of the piezostrain effect-mediated anomalous Hall effect (AHE), the ρxy–H curves at various values of temperature T can be obtained under different electric fields
Summary
The electric voltage has been used rather than the magnetic field or the current for direct control of the magnetization direction or magnetic anisotropy in ferromagnetic/ferroelectric (FM/FE) multiferroic heterostructures via magnetoelectric (ME) coupling, enabling reduced power consumption and improved speed.1–3 Tuning of the interfacial magnetism in magnetic films with perpendicular magnetic anisotropy (PMA) using electric fields is extremely important for realization of electric field-controllable high-sensitivity spintronic devices and ultrahigh storage densities.4–9 The most efficient way to realize this goal is to control the anomalous Hall resistance transition electrically.10,11 In FM/FE multiferroic heterostructures, the electric field-mediated ME coupling mechanisms are mainly based on the piezostrain effect that results from elastic coupling between the constituent materials.2,12 These mechanisms are indirect in that the piezostrain effect mediates the converse piezoelectric effect of the FE component and the magnetostrictive effect of the FM component to obtain the required magnetic response under an applied electric field; in addition, the charge effect occurs that depends on the charge screening at the FM/FE interface,13,14 which can affect the magnetic moments, the anomalous Hall resistance, and/or the exchange interaction. Cai et al.16 achieved deterministic magnetization switching in a Co/Ni/Co//PMN-PT multiferroic heterostructure with PMA via electric field control of the anomalous Hall resistance.
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