Abstract
The effect of Bi excess (0 to 15%) and subsequently Mn doping (0 to 20%) on the structural, ferroelectric, and magnetic properties of BiFeO3 (BFO) thin films deposited by chemical solution deposition technique on low cost substrates are reported in the present work. No significant changes in crystallographic structure of BFO were observed with 5% excess Bi. With further increasing the Bi concentrations (> 10%), however, rhombohedral phase transformation occurs with appearance of the other Bi excess phases. Piezoresponse force microscopy studies show that the BFO thin film having 5% excess Bi and 10% Mn yields good ferroelectric behavior. The ferromagnetic behavior of 10% Mn doped BFO thin film is confirmed with vibrating sample magnetometer studies. The results indicate that the 10% Mn doped BFO thin films deposited by chemical solution deposition technique on low cost substrate exhibit very good multiferroic properties, suitable for magnetic memories applications.
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