Abstract
The authors report the results of measurement of the piezoresistance of silicon-on-insulator (SOI) films produced using the zone-melting-recrystallization (ZMR) process. Silicon on insulator piezoresistors were fabricated on SOI wafers which were diced to form 0.5" by 1.5" beams. These beams were clamped at one end and deflected at the other, varying the stress in the piezoresistors. Measurements were conducted at dopant densities ranging from 5*1017 cm-3 to 1.8*1019 cm-3 while varying the temperature from 25 degrees C to 150 degrees C. The data were analysed to determine the gauge factor and its temperature coefficient. These results are compared with published data on the piezoresistance of diffused resistors fabricated in single-crystalline silicon. It has been determined that piezoresistors fabricated using ZMR have gauge factors equivalent to single-crystalline silicon but differ somewhat in the temperature coefficients of gauge factor and resistance.
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