Abstract
Abstract Electrical and piezoresistive properties of chemical vapor-deposited boron-doped p-type polycrystalline diamond films were investigated. The p-type polycrystalline diamond films of about 2 μm thickness were grown on a flat insulating polycrystalline diamond substrate using a conventional microwave plasma CVD system. The optimized p-type polycrystalline CVD film exhibited similar quality to homoepitaxial single crystalline diamond film with activation energy of 0.31–0.33 eV and small effects of grain boundaries. Piezoresistors (500 μm long and 50 μm wide) constituted from the optimized p-type polycrystalline diamond films were fabricated on diaphragm structure using photolithography and reactive-ion etching in an oxygen plasma. Relative change of the electrical resistance (ΔR/R0) of the p-type diamond piezoresistor was almost proportional to the applied strain. Gauge factor K for the p-type diamond piezoresistor was derived to be ∼ 1000 at room temperature and > 700 even at 200°C.
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