Abstract
The applicability of thin films of silicon separated by oxygen implantation (SIMOX) as pressure transducers in monolithic integrated-circuit technology is discussed, the buried dioxide layer formed through the deep implantation of oxygen ions giving very good isolated substrates. Piezoresistance and Van der Pauw resistivity measurements have been carried out on several SIMOX thin films under hydrostatic pressures up to 10 kbar. The pressure coefficient was found to be closed to the typical value ( 2×10 −3 kbar −1) in n-type diffused silicon layers but relaxation effects were observed on several samples. The time constant τ of this relaxation effect was measured to be 1 h. The results obtained on these layers under pressure are correlated with the electrical behaviour and compared with piezoresistance measurements in a single crystal and a bicrystal.
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