Piezoresistive coefficients of 〈1 1 0〉 silicon-on-insulator MOSFETs with 0.135/0.45/10 micrometers channel length with external forces

Abstract

This paper reports the piezoresistive coefficients of silicon-on-insulator (SOI) n-/p- MOSFETs of 0.135/0.45/10 μm channel length by 10 μm channel width. The dynamic transconductance and normalized saturation current changes were measured with the channels of longitudinal and transverse configurations under maximum stress of 45.7 MPa. The coefficients consist of the tendency of other works using bulk Si and Si MOSFETs but shows significant drain/source parasitic resistance effect for the SOI MOSFETs with 0.135 μm channel length.