Abstract
A nylon thread (NT) resistive memory is fabricated by performing a simple dip-and-dry solution process using graphene–poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) conductive ink. The piezoresistive characteristics of the NT resistive memory are further evaluated for wearable strain sensors. While a stretching strain (ε) is applied to the NT resistive memory, the relative resistance change of low-resistance state (LRS) is found to be higher than that of high-resistance state (HRS). This result implies that the contribution of the local overlapping interconnection change in graphene and PEDOT:PSS materials to the LRS resistance change is greater than that to the HRS resistance change. In addition, through many cycles of repeatedly stretching and releasing the LRS of the NT resistive memory at a fixed ε = 7.1%, a gauge factor of approximately 22 is measured and achieved for a highly sensitive and durable strain sensor. Finally, the actual integration of the NT resistive memory into textiles can provide resistive memory and piezoresistive sensor applications simultaneously for wearable electronic textiles.
Highlights
The integration of electronic components into textiles, called as electronic textiles (e-textiles), can provide an ideal platform to develop emerging wearable e-textiles [1]
Wallace et al [8] reported that the textile-based strain sensor using the same conductive polymer PEDOT:PSS has a low gauge factor (GF) of approximately 1
WORM was Characteristics switched from the low-resistance state (LRS) to the high-resistance state (HRS)
Summary
The integration of electronic components into textiles, called as electronic textiles (e-textiles), can provide an ideal platform to develop emerging wearable e-textiles [1]. Some textile-based electronic components such as sensors [2], transistors [3], and memories [4] have been reported. The conductive polymer poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) has been found to be quite adequate for manufacturing wearable e-textiles, because of its low-temperature solution process, low cost, and easy fabrication [3,4,5,6,7,8]. The textile-based resistive memory using the conductive polymer PEDOT:PSS has been proposed and demonstrated to have typical write-once-read-many-times (WORM) characteristics [4]. Wallace et al [8] reported that the textile-based strain sensor using the same conductive polymer PEDOT:PSS has a low GF of approximately 1. To improve the piezoresistive characteristics of the strain sensor, Ramaprabhu et al [9] proposed the use of the graphene–polymer composites to enhance the GF. Zhu et al presented a review regarding some wearable strain sensors with high sensitivity using graphene-based or PEDOT:PSS-based composites [10]
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