Abstract
We reported, for the first time, the piezoresistance behaviors of single p-type 6H-SiC nanowires. The results suggest that present p-type 6H-SiC nanowires could be an excellent candidate for the fabrication of robust and reliable stress sensors.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
