Abstract
In this work, we present a facile, low-cost, and effective approach to fabricate the UV photodetector with a CuI/ZnO double-shell nanostructure which was grown on common copper microwire. The enhanced performances of Cu/CuI/ZnO core/double-shell microwire photodetector resulted from the formation of heterojunction. Benefiting from the piezo-phototronic effect, the presentation of piezocharges can lower the barrier height and facilitate the charge transport across heterojunction. The photosensing abilities of the Cu/CuI/ZnO core/double-shell microwire detector are investigated under different UV light densities and strain conditions. We demonstrate the I-V characteristic of the as-prepared core/double-shell device; it is quite sensitive to applied strain, which indicates that the piezo-phototronic effect plays an essential role in facilitating charge carrier transport across the CuI/ZnO heterojunction, then the performance of the device is further boosted under external strain.
Highlights
Wurtzite-structured zinc oxide and gallium nitride are gaining much attention due to their exceptional optical, electrical, and piezoelectric properties which present potential applications in the diverse areas including field effect transistors, energy harvesters, photodetectors, solar cells, pressure sensors, and chemical sensors [1,2,3,4,5,6,7,8,9,10,11,12,13,14]
The crystal structure of Cu/CuI core/shell microwire and Cu/CuI/ ZnO core/double-shell microwire was studied by X-ray diffraction (XRD) measurement; see Fig. 2
It should be mentioned that no signal belonging to Cu2O or CuO was detected in the XRD spectra
Summary
Wurtzite-structured zinc oxide and gallium nitride are gaining much attention due to their exceptional optical, electrical, and piezoelectric properties which present potential applications in the diverse areas including field effect transistors, energy harvesters, photodetectors, solar cells, pressure sensors, and chemical sensors [1,2,3,4,5,6,7,8,9,10,11,12,13,14]. One-dimensional (1D) ZnO micro/nanowires have attracted great attention due to its advantages in facile synthetic procedure, long-term chemical stability, and environmental friendliness. Coupling the semiconducting and piezoelectric properties of ZnO, applying force/strain along the ZnO polar c-axis can generate piezoelectric polarization-induced piezopotential at two ends of 1D micro/nanowire, which facilitates the modulation of charge carrier transportation process [2]. Considerable attention has been paid to piezotronic and piezo-phototronic nanodevices based on ZnO micro/nanowires array and their strain-modulated photoresponsing behaviors [18, 19]. It should be noted that the presentation of free electrons in ZnO can partially screen piezopocharges under applied strain which unavoidably reduce the performances of piezotronic and piezo-phototronic nanodevice [20, 21].
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