Abstract
Theoretical analysis and calculation of polarization, piezoelectric field and sheet charge density of InN-based heterostructures have been studied as a function of lattice mismatch induced strain. Theoretical investigation shows that polarity of the grown structure plays substantial influence on charge density and electron confinement. A high sheet charge density and strong electron confinement at specific interfaces of the InN-based heterostructures are observed as a consequence of piezoelectric polarization and spontaneous polarization effects.
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