Abstract
In this work we analyze the coupled piezoelectric and semiconductive behavior of verticallyaligned ZnO nanowires under uniform compression. The screening effect on thepiezoelectric field caused by the free carriers in vertically compressed zinc oxide nanowires(NWs) has been computed by means of both analytical considerations and finite elementcalculations. We predict that, for typical geometries and donor concentrations, the lengthof the NW does not significantly influence the maximum output piezopotential because thepotential mainly drops across the tip, so that relatively short NWs can be sufficient forhigh-efficiency nanogenerators, which is an important result for wet-chemistryfabrication of low-cost, CMOS- or MEMS-compatible nanogenerators. Furthermore,simulations reveal that the dielectric surrounding the NW influences the outputpiezopotential, especially for low donor concentrations. Other parameters such as theapplied force, the sectional area and the donor concentration have been varied inorder to understand their effects on the output voltage of the nanogenerator.
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