Abstract

The piezoelectric photoacoustic (PPA) measurements of Al/sub x/Ga/sub 1-x/As (x=0.22, 0.28, 0.5) epitaxial layer grown on GaAs substrate were carried out in the temperature range from 297 to 80 K. In addition to the band-gap signal of GaAs substrate, the direct band-gap of AlGaAs were clearly observed in the higher photon-energy region. It was found that the temperature coefficient of the direct band-gap decreased with increasing Al mole fraction.

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