Piezoelectric InAs (211)B quantum dots grown by molecular beam epitaxy: Structural and optical properties

Abstract

The structural and optical properties of piezoelectric (211)B InAs nanostructures grown by molecular beam epitaxy are systematically investigated as a function of the various growth parameters. Depending on the specific growth conditions, we show that the InAs nanostructures take the form of a quantum dot (QD) or a quantum dash, their height ranges between 2 and 20 nm, and their density varies from a few times 108 cm−2 all the way up to a few times 1010 cm−2. The (211)B QDs are characterized by large aspect ratios, which are compatible with a truncated pyramid morphology. By analyzing the QD emission spectrum, we conclude that only small size QDs, with heights less than 3 nm, are optically active. This is consistent with high resolution transmission electron microscopy observations showing that large QDs contain misfit dislocations, whereas small QDs are dislocation-free. The formation of a two-dimensional wetting layer is observed optically, and its thickness is determined to be between 0.30 and 0.39 nm. Finally, the large blueshift in the QD emission observed with increasing excitation power represents a clear evidence of the strong built-in piezoelectric field present in these dots.