Abstract
For the past decades, group III-V and II-VI semiconductors have been at the forefront of semiconductor advances. However, the ionic bonds and non-centrosymmetry of their crystal structure – wurtzite or zinc-blende – imply that these materials are prone to exhibit piezoelectric effects. While piezoelectricity can be desired in some semiconductor devices, it can be harmful to others. After a general overview of the structural, piezoelectric, and electronic properties of group III-V and II-VI semiconductor materials we present the effect of piezoelectricity on devices and discuss mitigation strategies in relation to piezoelectricity.
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