Abstract
AbstractThe piezoelectric‐scattering mobility in a semiconductor quantum well is evaluated incorporating the effect of the finite width of the structure. The mobility is found to be enhanced in wider channels, but the effect is smaller than that in the case of deformation‐potential acoustic scattering. The combined screened mobility due to deformation potential acoustic and piezoelectric scattering using the Fcrmi‐Dirac statistics is seen to vary inversely with the temperature over the range of about 20 to 60 K. The slope of this variation is greater for smaller electron concentration and wider channels.
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