Abstract
To demonstrate picosecond-switching time for In/sub 0.53/Ga/sub 0.47/As/AlAs resonant-tunneling diodes (RTD's), we fabricated RTD's with various barrier widths and measured their switching times using electro-optic sampling technique specially arranged for RTD's with high current density. For an RTD having the barrier width of 1.4 nm with the peak current density of 4.5/spl times/10/sup 5/ A/cm/sup 2/ and peak-to-valley ratio of 3.9, the switching time of 2.2 ps has been observed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
