Abstract

We report noncontact measurements of CoSi/sub 2/ layers made using a commercial picosecond ultrasonic system. The layers were formed in a two step RTP-process beginning with samples with nominally 120 /spl Aring/ Co capped with either 150 /spl Aring/ PVD TiN, or 100 /spl Aring/ PVD Ti. The thickness, roughness and electrical resistivity of the final disilicide layers were investigated as functions of the first anneal temperature. The results indicate that the TiN-capped process yields a significantly smoother and more conductive disilicide film than the Ti-capped process over a wide range of first anneal temperatures.

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