Abstract
We study plasma index gratings at high photon excitation regime in GaAs samples of different origins. Two kinds of experimental results have been observed: the diffraction efficiency decay is monoexponential in undoped GaAs, whereas it presents two parts in chromium doped GaAs. Finally, the erasure of plasma index gratings is realized and modelized in GaAs: Cr using uniform picosecond illumination: a 95% decrease of the diffraction efficiency is achieved with an erasure pulse energy twice the writing pulse energy.
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