Abstract
Picosecond-resolved and steady-state photoluminescence at LHe temperature in low-energy ion-gun hydrogenated GaAs/GaAlAs heterostructures are reported. The exciton in the GaAs layer shows an increase in lifetime — up to a factor of 3 — for moderate hydrogenation, followed by a sharp decrease below the value for the untreated sample, for higher H doses. Luminescence efficiency shows a consistent behavior. Incorporation of H generates a strong D-A band falling ̃64 meV below the gap energy. The behavior for heavy hydrogenation indicates the formation of a new type of deep defect, not ascribed to surface damage, because of the protective GaAlAs layer, plus the fact that the excitonic emission of the latter shows no variation.
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