Abstract
The temporal evolution of non-equilibrium LO and TO phonon populations in photo-excited Ge was monitored at 77K and 300K using a picosecond Raman scattering technique. In addition to demonstrating that significant non-equilibrium populations are produced in non-polar semiconductors, the results also indicate that carrier-TO phonon interactions are of similar strength to carrier-LO phonon interactions. The phonon lifetimes and non-equilibrium populations are discussed and compared with data obtained by others in GaAs.
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