Picosecond pulse generation on CMOS: Design beyond transistor limits

Abstract

Nonlinear transmission media can be used for high amplitude, narrow pulse generation. We developed the theory of pulse generation in one- and two-dimensional transmission lattices. We used a conventional CMOS process to fabricate these lattices. Using these structures, it is possible to generate signals with a bandwidth of more than the cut-off frequency of the fastest transistor on the same process. We showed a 2-D nonlinear lattice that can generate pulses as narrow as 1 psec with an amplitude of more than 3V by using nonlinear constructive interference in a conventional 130 nm CMOS process.