Abstract
Picosecond photoresponse of carriers in Si ion-implanted Si samples has been measured using femtosecond transient reflectivity measurement. A threshold peak implant dose of 1016 cm −2 is required to achieve picosecond carrier lifetime. At this dosage, carrier lifetimes of 0.9 and 1.4 ps are measured for the as-implanted and 400 °C annealed Si substrates, respectively. The increase in carrier lifetime upon annealing is attributed to the reduction in the concentration of trap and recombination centers. Sheet resistance also shows a strong dependence on the annealing temperature. An eightfold increase in sheet resistance is obtained for annealed samples, and a reduction in hopping conduction, manifested by the e−1/T temperature dependence, may be responsible for the increase in resistance. Further evidence of decreasing hopping conduction can be also observed from the more than two orders of magnitude in reduction of sheet resistance as the peak dosage decreases from 1016 to 1014 cm−2.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
