Abstract
We have used picosecond transient photoreflectance techniques to measure the near-surface characteristics of unimplanted silicon and of silicon heavily implanted with carbon. These laser-based diagnostic techniques are non-destructive and allow measurement of the modification of near-surface properties sensitive to both photocarrier and photothermal phenomena. Photothermal phenomena dominate these results and yield important information concerning the extent of implant-induced materials modification.
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