Abstract
The increasing demand for high-density data storage leads to an increasing interest in novel memory concepts with high scalability and the opportunity of storing multiple bits in one cell. A promising candidate is the redox-based resistive switch repositing the information in form of different resistance states. For reliable programming, the underlying physical parameters need to be understood. We reveal that the programmable resistance states are linked to internal series resistances and the fundamental nonlinear switching kinetics. The switching kinetics of hbox {Ta}_2 hbox {O}_5-based cells was investigated in a wide range over 15 orders of magnitude from 10^5 s to 250 ps. The capacitive charging time of our device limits the direct observation of the set time below 770 ps, however, we found indication for an intrinsic switching speed of 10 ps at a stimulus of 3 V. On all time scales, multi-bit data storage capabilities were demonstrated. The elucidated link between fundamental material properties and multi-bit data storage paves the way for designing resistive switches for memory and neuromorphic applications.
Highlights
The increasing demand for high-density data storage leads to an increasing interest in novel memory concepts with high scalability and the opportunity of storing multiple bits in one cell
A typical valence change mechanism (VCM) cell consists of a resistively switching oxide layer sandwiched between a high work function metal electrode such as Pt and a low work function metal, e. g
One voltage polarity is needed to set the cell from high resistive state (HRS) to low resistive state (LRS), whereas the opposite voltage polarity is required to reset the device from LRS to HRS
Summary
The increasing demand for high-density data storage leads to an increasing interest in novel memory concepts with high scalability and the opportunity of storing multiple bits in one cell. The elucidated link between fundamental material properties and multi-bit data storage paves the way for designing resistive switches for memory and neuromorphic applications. A typical VCM cell consists of a resistively switching oxide layer sandwiched between a high work function metal electrode such as Pt and a low work function metal, e. This small current, increases the local temperature, which in turn increases the electrical conductivity This results in a thermal runaway leading to an abrupt SET transition[19,20]. A diffusion current of oxygen vacancies toward the active electrode sets in. Both effects lead to the gradual RESET of VCM devices[17]. The feature of multilevel switching is essential[26,27]
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